SIGC158T120R3E_15 Datasheet, PDF (4/9 Pages) Infineon Technologies AG – TRENCHSTOPTM IGBT3 Chip

Maximum Ratings
Parameter
Collector-emitter voltage, T_vj=25C
DC collector current, limited by T_{vj max} ²
Pulsed collector current, t_p limited by T_{vj max} ³
Gate-emitter voltage
Junction temperature range
Operating junction temperature
Short circuit data ^{3 / 4} VGE=15V, VCC=900V, T_vj=125°C
Reverse bias safe operating area ³ (RBSOA)
SIGC158T120R3E
Symbol
Value
Unit
V_CE
1200
V
I_C
-
A
I_C,puls
450
A
V_GE
20
V
T_vj
-55 ... +175
°C
T_vj
-55 ... +150
°C
t_sc
10
µs
I_C,max=300A, V_CE,max=1200V, T_vj125°C
Static Characteristics (tested on wafer), T_vj=25C
Parameter
Symbol
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Integrated gate resistor
V_(BR)CES
V_CEsat
V_GE(th)
I_CES
I_GES
r_G
Conditions
V_GE=0V, I_C=6mA
V_GE=15V, I_C=45A
I_C=6mA, V_GE=V_CE
V_CE=1200V, V_GE=0V
V_CE=0V, V_GE=20V
Value
Unit
min. typ. max.
1200 -
-
0.98 1.19 1.37 V
5.0 5.8 6.5
-
-
20 µA
-
- 600 nA
5

Electrical Characteristics ³
Parameter
Collector-emitter saturation
voltage
Input capacitance
T_vj=25C
T_vj=125C
Reverse transfer capacitance
Symbol
V_CEsat
C_ies
C_res
Conditions
V_GE=15V, I_C=150A
V_CE=25V,
V_GE=0V, f=1MHz
T_vj=25C
Value
Unit
min. typ. max.
1.4 1.7 2.1
V
-
2.0
-
- 10766 -
pF
- 488 -
2 _{Depending on thermal properties of assembly.}
3 _{Not subject to production test - verified by design/characterization.}
4 _{Allowed number of short circuits: <1000; time between short circuits: >1s.}
L7698M, L7698T, L7698E
4
Rev. 2.3, 19.08.2015