PXAC261002FC Datasheet, PDF (4/8 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 100 W, 28 V, 2490 – 2690 MHz

PXAC261002FC
Typical Performance (cont.)
Small Signal CW Performance
Gain & Input Return Loss
V_DD = 28 V, I_DQ = 210 mA
17
0
Gain
16
-5
15
-10
IRL
14
-15
13
2500
2550
2600
2650
c261002fc_g6
-20
2700 2750
Frequency (MHz)
Load Pull Performance
Main Side Load Pull Performance – Pulsed CW signal: 160 µs, 10% duty cycle, V_DD = 28 V, I_DQ = 240 mA
Max Output Power
P_1dB
Max PAE
Freq
Zs
[MHz]
[Ω]
Zl
Gain
P_OUT P_OUT
PAE
Zl
Gain
P_OUT P_OUT
PAE
[Ω]
[dB] [dBm]
[W]
[%]
[Ω]
[dB]
[dBm]
[W]
[%]
2540 13.3 – j23.8 5.7 – j10.9 16.8
46.58
45
50.3 10.9 – j7.1 19.1
45.1
32
59.5
2590 16.5 – j22.0 5.9 – j11.5 16.7
46.44
44
50.3
9.7 – j7.6
18.7
45.3
34
58.5
2640 21 – j24.7 6.4 – j11.5 16.8
46.35
43
50.0
10 – j6.2
19.1
44.9
31
58.0
Peak Side Load Pull Performance – Pulsed CW signal: 160 µs, 10% duty cycle, 28 V, V_GS1 = 1.4 V
Max Output Power
P_1dB
Max PAE
Freq
Zs
[MHz]
[Ω]
Zl
Gain
P_OUT P_OUT
PAE
Zl
Gain
P_OUT P_OUT
PAE
[Ω]
[dB] [dBm]
[W]
[%]
[Ω]
[dB]
[dBm]
[W]
[%]
2540 3.8-j12.1 11.8-j7.3
13.0
50
100
53.5
5.2-j5.3
14.4
48.4
69
63.4
2590 5.2-j12.8
13-j5.4
12.8
50
100
53.4
5.7-j5.6
14.2
48.5
71
62.2
2640 5.8-j13.3
14-j3.9
12.8
49.9
98
52.9
6.6-j6
14.2
48.4
69
61.0
Data Sheet
4 of 8
Rev. 03.3, 2016-06-15