IPZ65R065C7 Datasheet, PDF (4/15 Pages) Infineon Technologies AG – Metal Oxide Semiconductor Field Effect Transistor

650VCoolMOS™C7PowerTransistor
IPZ65R065C7
2Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current ¹⁾
Pulsed drain current ²⁾
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current, single pulse
MOSFET dv/dt ruggedness
Gate source voltage (static)
Gate source voltage (dynamic)
Power dissipation
Storage temperature
Operating junction temperature
Mounting torque
Continuous diode forward current
Diode pulse current²⁾
Reverse diode dv/dt ³⁾
ID
ID,pulse
EAS
EAR
IAS
dv/dt
VGS
VGS
Ptot
Tstg
Tj
-
IS
IS,pulse
dv/dt
Maximum diode commutation speed
Insulation withstand voltage
dif/dt
VISO
Min.
-
-
-
-
-
-
-
-20
-30
-
-55
-55
-
-
-
-
-
-
Values
Typ. Max.
-
33
-
21
-
145
-
171
-
0.85
-
10.2
-
100
-
20
-
30
-
171
-
150
-
150
-
60
-
33
-
145
-
1.5
-
60
-
n.a.
Unit Note/TestCondition
A
TC=25°C
TC=100°C
A TC=25°C
mJ ID=10.2A; VDD=50V; see table 10
mJ ID=10.2A; VDD=50V; see table 10
A-
V/ns VDS=0...400V
V static;
V AC (f>1 Hz)
W TC=25°C
°C -
°C -
Ncm M3 and M3.5 screws
A TC=25°C
A TC=25°C
V/ns
VDS=0...400V,ISD<=IS,Tj=25°C
see table 8
A/µs
VDS=0...400V,ISD<=IS,Tj=25°C
see table 8
V Vrms,TC=25°C,t=1min
1) _{Limited by Tj max.}
2) _{Pulse width tp limited by Tj,max}
3)_{IdenticallowsideandhighsideswitchwithidenticalRG}
Final Data Sheet
4
Rev.2.1,2013-10-18