IPT012N08N5 Datasheet, PDF (4/12 Pages) Infineon Technologies AG – N-channel, normal level

OptiMOS^TM5Power-Transistor,80V
IPT012N08N5
2Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current
Pulsed drain current²⁾
Avalanche energy, single pulse³⁾
Gate source voltage
Power dissipation
Operating and storage temperature
ID
ID,pulse
EAS
VGS
Ptot
Tj,Tstg
Min.
-
-
-
-
-
-20
-
-55
Values
Typ. Max.
-
300
-
279
-
52
-
1200
-
817
-
20
-
375
-
175
Unit Note/TestCondition
VGS=10V,TC=25°C
A VGS=10V,TC=100°C
VGS=10V,TC=25°C,RthJA=40K/W¹⁾
A TC=25°C
mJ ID=150A,RGS=25Ω
V-
W TC=25°C
°C
IEC climatic category;
DIN IEC 68-1: 55/175/56
3Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Symbol
Thermal resistance, junction - case
Device on PCB,
minimal footprint
Device on PCB,
6 cm² cooling area¹⁾
RthJC
RthJA
RthJA
Min.
-
Values
Typ. Max.
0.2 0.4
Unit Note/TestCondition
K/W -
-
-
62 K/W -
-
-
40 K/W -
1) _{Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm}2 _{(one layer, 70 µm thick) copper area for drain}
connection. PCB is vertical in still air.
2) _{See figure 3 for more detailed information}
3) _{See figure 13 for more detailed information}
Final Data Sheet
4
Rev.2.1,2015-02-23