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| IPP114N03L Datasheet, PDF (4/10 Pages) Infineon Technologies AG – OptiMOS™3 Power-Transistor | |||
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1 Power dissipation
P tot=f(T C)
50
2 Drain current
I D=f(T C); V GSâ¥10 V
40
IPP114N03L G
IPB114N03L G
40
30
30
20
20
10
10
0
0
0
50
100
150
200
0
50
100
150
200
T C [°C]
T C [°C]
3 Safe operating area
I D=f(V DS); T C=25 °C; D =0
parameter: t p
103
4 Max. transient thermal impedance
Z thJC=f(t p)
parameter: D =t p/T
10
limited by on-state
resistance
1 µs
102
10 µs
100 µs
DC
101
1 ms
10 ms
100
0.5
1 0.2
0.1
0.05
0.02
0.01
0.1
single pulse
10-1
10-1
Rev. 2.0
100
101
V DS [V]
102
0.01 0
10-6
0
10-5
0
10-4
0
10-3
0
10-2
0
10-1
1
100
t p [s]
page 4
2010-03-01
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