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| IPP055N03LG Datasheet, PDF (4/10 Pages) Infineon Technologies AG – OptiMOS®3 Power-Transistor | |||
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1 Power dissipation
P tot=f(T C)
2 Drain current
I D=f(T C); V GSÂ10 V
IPP055N03L G
IPB055N03L G
80
60
50
60
40
40
30
20
20
10
0
0
0
50
100
150
200
0
50
100
150
200
T C [°C]
T C [°C]
3 Safe operating area
I D=f(V DS); T C=25 °C; D =0
parameter: t p
103
limited by on-state
resistance
4 Max. transient thermal impedance
Z thJC=f(t p)
parameter: D =t p/T
10
1 μs
102
10 μs
100 μs
DC
101
1 ms
10 ms
100
0.5
1
0.2
0.1
0.05
0.1 0.02
0.01
single pulse
10-1
10-1
Rev. 1.02
100
101
V DS [V]
102
0.01 0
10-6
0
10-5
0
10-4
0
10-3
0
10-2
0
10-1
1
100
t p [s]
page 4
2007-08-29
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