IPP054NE8N Datasheet, PDF (4/11 Pages) Infineon Technologies AG – OptiMOS®2 Power-Transistor

1 Power dissipation
P _tot=f(T _C)
IPB051NE8N G IPI05CNE8N G
IPP054NE8N G
2 Drain current
I _D=f(T _C); V _GS≥10 V
350
120
300
100
250
80
200
60
150
40
100
20
50
0
0
0
50
100
150
200
0
50
100
150
200
T _C [°C]
T _C [°C]
3 Safe operating area
I _D=f(V _DS); T _C=25 °C; D =0
parameter: t _p
1000
4 Max. transient thermal impedance
Z _thJC=f(t _p)
parameter: D =t _p/T
10⁰
100
10
1 µs
10 µs
100 µs
1 ms
10 ms
DC
0.5
10^{-1 0.2}
0.1
0.05
0.02
0.01
10^-2
single pulse
1
0.1
Rev. 1.04
1
10
V _DS [V]
100
10^-3
10^-5
10^-4
10^-3
10^-2
10^-1
10⁰
t _p [s]
page 4
2006-02-17