IPI04N03LA Datasheet, PDF (4/10 Pages) Infineon Technologies AG – OptiMOS 2 Power-Transistor

1 Power dissipation
P _tot=f(T _C)
2 Drain current
I _D=f(T _C); V _GS≥10 V
IPB04N03LA
IPI04N03LA, IPP04N03LA
120
100
100
80
80
60
60
40
40
20
20
0
0
0
50
100
150
200
0
50
100
150
200
T _C [°C]
T _C [°C]
3 Safe operation area
I _D=f(V _DS); T _C=25 °C; D =0
parameter: t _p
1000
4 Max. transient thermal impedance
Z _thJC=f(t _p)
parameter: D =t _p/T
10
limited by on-state
resistance
100
DC
10
1 µs
10 µs
100 µs
1 ms
10 ms
1 0.5
0.2
0.1
0.1 _0.05
0.02
0.01
single pulse
0.01
1
0.1
Rev. 1.3
1
10
V _DS [V]
0.001
100
010^-6 100^-5 10^-4 100^-3 10^-0² 10^-10 10⁰ 1
t _p [s]
page 4
2003-12-18