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IPD50R520CP Datasheet, PDF (4/10 Pages) Infineon Technologies AG – CoolMOSTM Power Transistor
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1 Power dissipation
P tot=f(T C)
70
2 Safe operating area
I D=f(V DS); T C=25 °C; D =0
parameter: t p
102
IPD50R520CP
60
limited by on-state
resistance
1 µs
50
101
10 µs
40
100 µs
1 ms
30
10 ms
100
20
DC
10
0
10-1
0 25 50 75 100 125 150 175
100
101
102
103
TC [°C]
VDS [V]
3 Max. transient thermal impedance
Z(thJC)=f(tp);
parameter: D=t p/T
101
4 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
20
20 V
0.5
100
0.2
10-1
0.1
0.05
0.02
0.01
single pulse
10 V
8V
15
7V
10
6V
5.5 V
5
5V
10-2
10-5
10-4
10-3
10-2
10-1
100
tp [s]
0
0
4.5 V
5
10
15
20
VDS [V]
Rev. 2.0
page 4
2007-11-21
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