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IPD50N06S3-15 Datasheet, PDF (4/9 Pages) Infineon Technologies AG – OptiMOS-T Power-Transistor
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IPD50N06S3-15
1 Power dissipation
P tot = f(T C); V GS ≥ 6 V
2 Drain current
I D = f(T C); V GS ≥ 6 V
70
60
60
50
50
40
40
30
30
20
20
10
10
0
0
0
50
100
150
200
0
50
100
150
200
T C [°C]
T C [°C]
3 Safe operating area
I D = f(V DS); T C = 25 °C; D = 0
parameter: t p
1000
4 Max. transient thermal impedance
Z thJC = f(t p)
parameter: D =t p/T
101
100
10
1
0.1
Rev. 1.2
1 µs
10 µs
100 µs
1 ms
1
10
100
V DS [V]
0.5
100
0.1
10-1
0.05
0.01
10-2
single pulse
10-3
10-7 10-6 10-5 10-4 10-3 10-2 10-1 100
t p [s]
page 4
2009-05-20
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