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IPD30N03S4L-09 Datasheet, PDF (4/9 Pages) Infineon Technologies AG – OptiMOS-T2 Power-Transistor
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IPD30N03S4L-09
1 Power dissipation
P tot = f(T C); V GS ≥ 6 V
2 Drain current
I D = f(T C); V GS ≥ 6 V
50
35
30
40
25
30
20
15
20
10
10
5
0
0
0
50
100
150
200
0
50
100
150
200
T C [°C]
T C [°C]
3 Safe operating area
I D = f(V DS); T C = 25 °C; D = 0
parameter: t p
1000
4 Max. transient thermal impedance
Z thJC = f(t p)
parameter: D =t p/T
101
100
10
1 µs
10 µs
100 µs
1 ms
0.5
100
0.1
10-1
0.05
0.01
10-2
single pulse
1
0.1
Rev. 1.0
1
10
V DS [V]
10-3
100
10-6
10-5
10-4
10-3
10-2
10-1
100
t p [s]
page 4
2008-08-20
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