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IPD230N06LG Datasheet, PDF (4/9 Pages) Infineon Technologies AG – OptiMOS® Power-Transistor
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1 Power dissipation
P tot=f(T C)
2 Drain current
I D=f(T C); V GS≥10 V
IPD230N06L G
120
30
100
25
80
20
60
15
40
10
20
5
0
0
0
50
100
150
200
0
50
100
150
200
T C [°C]
T C [°C]
3 Safe operating area
I D=f(V DS); T C=25 °C; D =0
parameter: t p
4 Max. transient thermal impedance
Z thJC=f(t p)
parameter: D =t p/T
101
limited by on-state
resistance
102
101
100
1 µs
10 µs
100 µs
1 ms
DC
10 ms
10-1
10-1
100
101
102
V DS [V]
100 0.5
0.2
0.1
10-1 0.05
0.02
0.01
single pulse
10-2
10-6
10-5
10-4
10-3
10-2
10-1
100
t p [s]
Rev. 1.0
page 4
2006-06-13
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