IPB80P03P4-05 Datasheet, PDF (4/9 Pages) Infineon Technologies AG – OptiMOS-P2 Power-Transistor

1 Power dissipation
P _tot = f(T _C); V _GS ≤ -6V
IPB80P03P4-05
IPI80P03P4-05, IPP80P03P4-05
2 Drain current
I _D = f(T _C); V _GS ≤ -6V; SMD
160
100
140
80
120
100
60
80
40
60
40
20
20
0
0
0
50
100
150
200
0
50
100
150
200
T _C [°C]
T _C [°C]
3 Safe operating area
I _D = f(V _DS); T _C = 25 °C; D = 0; SMD
parameter: t _p
1000
4 Max. transient thermal impedance
Z _thJC = f(t _p)
parameter: D =t _p/T
10¹
1 µs
100
10 µs
100 µs
1 ms
10⁰
0.5
10^-1
0.1
0.05
10
0.01
10^-2
single pulse
1
0.1
Rev. 1.0
1
10
-V _DS [V]
10^-3
100
10^-6
10^-5
10^-4
10^-3
10^-2
10^-1
10⁰
t _p [s]
page 4
2008-09-30