IPB80N03S4L-03_10 Datasheet, PDF (4/9 Pages) Infineon Technologies AG – OptiMOS-T2 Power-Transistor

1 Power dissipation
P _tot = f(T _C); V _GS ≥ 6 V
IPB80N03S4L-03
IPI80N03S4L-04, IPP80N03S4L-04
2 Drain current
I _D = f(T _C); V _GS ≥ 6 V; SMD
100
100
90
80
80
70
60
60
50
40
40
30
20
20
10
0
0
0
50
100
150
200
0
50
100
150
200
T _C [°C]
T _C [°C]
3 Safe operating area
I _D = f(V _DS); T _C = 25 °C; D = 0, SMD
parameter: t _p
1000
4 Max. transient thermal impedance
Z _thJC = f(t _p)
parameter: D =t _p/T
10¹
100
10
1 µs
10 µs
1 ms ^{100 µs}
10^{0 0.5}
0.1
10^-1
0.05
0.01
10^-2
single pulse
1
0.1
Rev. 2.1
1
10
V _DS [V]
10^-3
100
10^-6
10^-5
10^-4
10^-3
10^-2
10^-1
10⁰
t _p [s]
page 4
2010-03-08