IPB60R380C6 Datasheet, PDF (4/19 Pages) Infineon Technologies AG – Metal Oxide Semiconductor Field Effect Transistor

600V CoolMOS™ C6 Power Transistor
IPx60R380C6
Maximum ratings
2
Maximum ratings
at T_j = 25 °C, unless otherwise specified.
Table 2 Maximum ratings
Parameter
Symbol
Continuous drain current¹⁾
I_D
Pulsed drain current²⁾
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current, repetitive
MOSFET dv/dt ruggedness
Gate source voltage
I_D,pulse
E_AS
E_AR
I_AR
dv/dt
V_GS
Power dissipation for 
TO-220, TO-252, TO-262, TO-263
Power dissipation for 
TO-220 FullPAK
Operating and storage temperature
Mounting torque
TO-220
Mounting torque
TO-220 FullPAK
Continuous diode forward current
Diode pulse current²⁾
Reverse diode dv/dt³⁾
P_tot
P_tot
T_j,T_stg
I_S
I_S,pulse
dv/dt
Min.
-
-
-
Values
Typ. Max.
-
10.6
6.7
-
30
-
210
-
-
0.32
-
-
1.8
-
-
50
-20 -
20
-30
30
-
-
83
-
-
31
-55 -
150
-
-
60
50
-
-
9.2
-
-
30
-
-
15
Maximum diode commutation
di_f/dt
500
speed³⁾
1) Limited by T_j,max. Maximum duty cycle D=0.75
2) Pulse width t_p limited by T_j,max
3) Identical low side and high side switch with identical R_G
Unit Note / Test Condition
A
A
mJ
A
V/ns
V
W
T_C= 25 °C
T_C= 100°C
T_C=25 °C
I_D=1.8 A,V_DD=50 V
(see table 21)
I_D=1.8 A,V_DD=50 V
V_DS=0...480 V
static
AC (f>1 Hz)
T_C=25 °C
W T_C=25 °C
°C
Ncm M3 and M3.5 screws
M2.5 screws
A
A
V/ns
A/µs
T_C=25 °C
T_C=25 °C
V_DS=0...480 V,I_SD  I_D,
T_j=125 °C
(see table 22)
FinalData Sheet
4
Rev. 2.0, 2009-08-27