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IPB320N20N3G Datasheet, PDF (4/11 Pages) Infineon Technologies AG – OptiMOSTM3 Power-Transistor Features N-channel, normal level
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1 Power dissipation
P tot=f(T C)
IPB320N20N3 G IPP320N20N3 G
IPI320N20N3 G
2 Drain current
I D=f(T C); V GS≥10 V
160
40
140
120
30
100
80
20
60
40
10
20
0
0
0
50
100
150
200
0
50
100
150
200
T C [°C]
T C [°C]
3 Safe operating area
I D=f(V DS); T C=25 °C; D =0
parameter: t p
103
4 Max. transient thermal impedance
Z thJC=f(t p)
parameter: D =t p/T
102
101
100
10-1
10-1
Rev. 2.2
1 µs
10 µs
100 µs
1 ms
10 ms
DC
100
0.5
0.2
0.1
10-1 0.05
0.02
0.01
single pulse
100
101
102
V DS [V]
10-2
103
10-5
10-4
10-3
10-2
10-1
100
t p [s]
page 4
2009-10-22
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