IPB09N03LAT Datasheet, PDF (4/9 Pages) Infineon Technologies AG – OptiMOS 2Power-Transistor

1 Power dissipation
P _tot=f(T _C)
2 Drain current
I _D=f(T _C); V _GS≥10 V
IPB09N03LA G
70
60
60
50
40
40
30
20
20
10
0
0
0
50
100
150
200
0
50
100
150
200
T _C [°C]
T _C [°C]
3 Safe operating area
I _D=f(V _DS); T _C=25 °C; D =0
parameter: t _p
1000
4 Max. transient thermal impedance
Z _thJC=f(t _p)
parameter: D =t _p/T
10
1 µs
limited by on-state
resistance
100
10
10 µs
100 µs
DC
1 ms
10 ms
0.5
1
0.2
0.1
0.05
0.1
0.02
0.01
single pulse
1
0.1
Rev. 1.6
1
10
V _DS [V]
0.01
100
010^{-6 100-5 100-4 10-3}0 ^10-20 ^10-1 0 ¹⁰⁰ 1
t _p [s]
page 4
2006-05-11