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IPB020NE7N3G Datasheet, PDF (4/9 Pages) Infineon Technologies AG – OptiMOSTM3 Power-Transistor
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1 Power dissipation
P tot=f(T C)
2 Drain current
I D=f(T C); V GS≥10 V
IPB020NE7N3 G
350
140
300
120
250
100
200
80
150
60
100
40
50
20
0
0
0
50
100
150
200
0
50
100
150
200
T C [°C]
T C [°C]
3 Safe operating area
I D=f(V DS); T C=25 °C; D =0
parameter: t p
103
limited by on-state
resistance
1 µs
10 µs
4 Max. transient thermal impedance
Z thJC=f(t p)
parameter: D =t p/T
100
100 µs
0.5
102
1 ms
10 ms
0.2
10-1
DC
0.1
101
0.05
100
10-1
100
101
V DS [V]
0.02
0.01
single pulse
10-2
102
10-5
10-4
10-3
10-2
10-1
100
t p [s]
Rev. 2.2
page 4
2009-11-16
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