IKW15N120T2_13 Datasheet, PDF (4/15 Pages) Infineon Technologies AG – IGBT in 2nd generation TrenchStop® technology with soft, fast recovery anti-parallel Emitter Controlled Diode

IKW15N120T2
TrenchStop^® 2^nd generation Series
Switching Characteristic, Inductive Load, at T_j=175 C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during t_b
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_ts
t_rr
Q_rr
I_rrm
di_rr/dt
T_j=175C
V_CC=600V,I_C=15A,
V_GE=0/15V,
R_G= 41.8,
L_¹⁾=315nH,
C_¹⁾=34pF
Energy losses include
“tail” and diode
reverse recovery.
T_j=175C
V_R=600V, I_F=15A,
di_F/dt=460A/s
min.
-
-
-
-
-
-
-
-
-
-
-
Value
typ.
31
30
450
176
1.5
1.3
2.8
460
2.65
13
123
Unit
max.
- ns
-
-
-
- mJ
-
-
- ns
- µC
-A
A/s
1) _{Leakage inductance L  a nd Stray capacity C  due to dynamic test circuit in Figure E.}
IFAG IPC TD VLS
4
Rev. 2.2 12.06.2013