IKD03N60RFA Datasheet, PDF (4/16 Pages) Infineon Technologies AG – Optimized Eon, Eoff and Qrr for low switching losses

IKD03N60RFA
TRENCHSTOP^TMRC-DrivesFastSeries
MaximumRatings
Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.
Parameter
Collector-emittervoltage,Tvj≥25°C
DCcollectorcurrent,limitedbyTvjmax
TC=25°C
TC=100°C
Pulsedcollectorcurrent,tplimitedbyTvjmax1)
Turn off safe operating area
VCE≤600V,Tvj≤175°C,tp=1µs¹⁾
Diodeforwardcurrent,limitedbyTvjmax
TC=25°C
TC=100°C
Diodepulsedcurrent,tplimitedbyTvjmax1)
Gate-emitter voltage
Short circuit withstand time
VGE=15.0V,VCC≤400V
Allowed number of short circuits < 1000
Time between short circuits: ≥ 1.0s
Tvj=150°C
PowerdissipationTC=25°C
Operating junction temperature
Storage temperature
Soldering temperature,
reflow soldering (MSL1 according to JEDEC J-STA-020)
Symbol
VCE
IC
ICpuls
-
IF
IFpuls
VGE
tSC
Ptot
Tvj
Tstg
Value
Unit
600
V
5.0
A
2.5
7.5
A
7.5
A
5.0
A
2.5
7.5
A
±20
V
µs
5
53.6
W
-40...+175
°C
-55...+150
°C
260
°C
ThermalResistance
Parameter
Characteristic
IGBT thermal resistance,²⁾
junction - case
Diode thermal resistance,³⁾
junction - case
Thermal resistance, min. footprint
junction - ambient
Thermal resistance, 6cm² Cu on
PCB
junction - ambient
Symbol Conditions
Rth(j-c)
Rth(j-c)
Rth(j-a)
Rth(j-a)
Max.Value
Unit
2.80
K/W
6.80
K/W
75
K/W
50
K/W
1) _{Defined by design. Not subject to production test.}
2) _{Rth/Zth based on single cooling pulse. Please be aware that a correct Rth measurement of the IGBT, is not possible using a thermocouple.}
3) _{Rth/Zth based on single cooling pulse. Please be aware that a correct Rth measurement of the Diode, is not possible using a thermocouple.}
4
Rev.2.1,2014-12-15