IDV08E65D2 Datasheet, PDF (4/10 Pages) Infineon Technologies AG – Electrically isolated FullPAK for efficient assembly

IDV08E65D2
EmitterControlledDiode
MaximumRatings
Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.
Parameter
Symbol
Value
Unit
Repetitive peak reverse voltage
Diodeforwardcurrent,limitedbyTvjmax
TC=25°C
TC=100°C
Diodepulsedcurrent,tplimitedbyTvjmax
Diode surge non repetitive forward current
TC=25°C,tp=8.3ms,sinehalfwave
PowerdissipationTC=25°C
Operating junction temperature
Storage temperature
Soldering temperature,
wave soldering 1.6 mm (0.063 in.) from case for 10s
VRRM
IF
IFpuls
IFSM
Ptot
Tvj
Tstg
650
V
8.0
A
4.0
24.0
A
60.0
A
27.3
W
-40...+175
°C
-55...+150
°C
260
°C
Mounting torque, M3 screw
Maximum of mounting processes: 3
M
0.6
Nm
ThermalResistance
Parameter
Characteristic
Diode thermal resistance,¹⁾
junction - case
Thermal resistance
junction - ambient
Symbol Conditions
Rth(j-c)
Rth(j-a)
Max.Value
Unit
5.50
K/W
65
K/W
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
StaticCharacteristic
Diode forward voltage
Reverse leakage current
Symbol Conditions
IF=8.0A
VF
Tvj=25°C
Tvj=175°C
VR=650V
IR
Tvj=25°C
Tvj=175°C
Value
Unit
min. typ. max.
- 1.60 2.20 V
- 1.65 -
-
- 40.0 µA
-
- 2000.0
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
DynamicCharacteristic
Internal emitter inductance
measured 5mm (0.197 in.) from
case
Symbol Conditions
LE
Value
Unit
min. typ. max.
- 7.0 - nH
1) _{Please be aware that in non standard load conditions, due to high Rth(j-c), Tvj close to Tvjmax can be reached.}
4
Rev.2.2,2014-08-28