IDK12G65C5_13 Datasheet, PDF (4/11 Pages) Infineon Technologies AG – Silicon Carbide Diode

5^th Generation thinQ!^TM SiC Schottky Diode
IDK12G65C5
Maximum ratings
2
Maximum ratings
Table 3
Parameter
Maximum ratings
Symbol
Continuous forward current
I_F
Surge non-repetitive forward current, I_F,SM
sine halfwave
Non-repetitive peak forward current I_F,max
i²t value
∫ i²dt
Repetitive peak reverse voltage
Diode dv/dt ruggedness
Power dissipation
Operating and storage temperature
V_RRM
dv/dt
P_tot
T_j;T_stg
Min.
–
–
–
–
–
–
–
–
–
-55
Values
Typ.
–
–
–
–
–
–
–
–
–
–
Max.
12
97
83
505
47
35
650
100
104
175
Unit Note/Test Condition
A
A²s
V
V/ns
W
°C
T_C < 140°C, D=1
T_C = 25°C, t_p=10 ms
T_C = 150°C, t_p=10 ms
T_C = 25°C, t_p=10 µs
T_C = 25°C, t_p=10 ms
T_C = 150°C, t_p=10 ms
T_j = 25°C
V_R=0..480 V
T_C = 25°C
3
Thermal characteristics
Table 4
Thermal characteristics TO-263-2
Parameter
Symbol
Min.
Thermal resistance, junction-case R_thJC
–
Thermal resistance, junction-
ambient ¹⁾
R_thJA
–
Values
Typ.
0.9
–
35
Max.
1.5
62
Unit Note/Test Condition
K/W
SMD version, device on
PCB, minimal footprint
SMD version, device on
PCB, 6cm² cooling area
1) Device on 40mm*40mm*1.5mm one layer epoxy PCB FR4 with 6cm² copper area (thickness 70µm) for drain
connection, PCB is vertical without air stream cooling.
Final Data Sheet
4
Rev. 2.0, 2013-07-20