IDH09G65C5_12 Datasheet, PDF (4/11 Pages) Infineon Technologies AG – ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.

5^th Generation thinQ!^TM SiC Schottky Diode
IDH09G65C5
Maximum ratings
2
Maximum ratings
Table 3
Parameter
Maximum ratings
Symbol
Continuous forward current
I_F
Surge non-repetitive forward current, I_F,SM
sine halfwave
Non-repetitive peak forward current I_F,max
i²t value
∫ i²dt
Repetitive peak reverse voltage
Diode dv/dt ruggedness
Power dissipation
Operating and storage temperature
Mounting torque
V_RRM
dv/dt
P_tot
T_j;T_stg
Min.
–
–
–
–
–
–
–
–
–
-55
–
Values
Typ.
–
–
–
–
–
–
–
–
–
–
–
Max.
9
75
65
396
28
21
650
100
82
175
70
Unit Note/Test Condition
A
A²s
V
V/ns
W
°C
Ncm
T_C < 145°C, D=1
T_C = 25°C, t_p=10 ms
T_C = 150°C, t_p=10 ms
T_C = 25°C, t_p=10 µs
T_C = 25°C, t_p=10 ms
T_C = 150°C, t_p=10 ms
T_j = 25°C
V_R=0..480 V
T_C = 25°C
M3 screws
3
Thermal characteristics
Table 4
Thermal characteristics TO-220-2
Parameter
Symbol
Min.
Thermal resistance, junction-case R_thJC
–
Thermal resistance, junction-
ambient
R_thJA
–
Soldering temperature,
T_sold
wavesoldering only allowed at leads
–
Values
Typ.
1.1
–
–
Max.
1.8
62
260
Unit Note/Test Condition
K/W leaded
°C
1.6mm (0.063 in.) from
case for 10 s
Final Data Sheet
4
Rev. 2.2, 2012-12-10