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IDD05SG60C_13 Datasheet, PDF (4/7 Pages) Infineon Technologies AG – 3rd Generation thinQ!TM SiC Schottky Diode
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5 Typ. capacitance charge vs. current slope
Q C=f(di F/dt )6); I F≤I F,max
IDD05SG60C
6 Typ. reverse current vs. reverse voltage
I R=f(VR); parameter: T j
7
6
5
4
3
2
1
0
100
400
700
diF/dt [A/µs]
7 Transient thermal impedance
Z thJC=f(t p); parameter: D = t P/T
101
100
10-1
10-2
10-3
175 °C
150 °C
100 °C
10-4
25 °C
100 -55 °C200
300
400
500
600
1000
VR [V]
8 Typ. capacitance vs. reverse voltage
C =f(V R); T C=25 °C, f =1 MHz
101
150
125
100
0.5
0.2
0.1
10-1
0.05
0.02
0.01
0
10-2
10-6
10-5
10-4
10-3
tp [s]
10-2
10-1
100
75
50
25
0
10-1
Rev. 2.4
page 4
100
101
VR [V]
102
103
2013-02-11
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