HYB39L128160AT Datasheet, PDF (4/6 Pages) Infineon Technologies AG – BJAWBMSpecialty DRAMs Mobile-RAM

Ahead of the Trend
Voltage
conversion
3.3 V
2003
2004
2.5 V
2005
1.8 V
Trend towards
green package
TSOP
Trend towards
BGA
FGBA
KGD
SDR
Trend towards
DDR
Known Good Die
DDR
Source: IFX
M A N U F A C T U R E R S A R E C H A L L E N G E D to lower core and I/O voltage in order to further reduce power
consumption. Compared with the 2.5 V technology previously in use, Infineon’s next-generation 1.8 V technology meets
these demands by cutting power consumption by approximately 40 %.
T H E M A R K E T I S A L S O C A L L I N G for a reduction in harmful substances, the elimination of lead in chips
and easier recycling. Infineon is one of the first manufacturers to offer Mobile-RAM chips in green packages.
I N A N T I C I P A T I O N O F R I S I N G demand for cost-optimized multi-chip solutions, (combining flash and
Mobile-RAM) Infineon will also soon be introducing a pre-tested Known Good Die (KGD) / wafer solution.
A N D T O R E D U C E P O W E R consumption even further, Infineon plans to switch its Mobile-RAM devices from
SDR to DDR speeds. Due to be launched in the near future. For more details, please contact your local sales representative.
Industry-wide Standard
I N F I N E O N W O R K E D C L O S E L Y with its industry partners to standardize the low-power features and
54-ball FBGA package for Mobile-RAM through JEDEC (Joint Electron Device Engineering Council), the semiconductor
engineering standardization body of EIA (Electronic Industry Alliance). Information on controller and ASIC vendors that
support the new Mobile-RAM feature set standard is available on request.
F O R T H E L A T E S T I N F O R M A T I O N and datasheet updates on Mobile-RAM, visit our website at
www.infineon.com/memory/Mobile-RAM