CLY38 Datasheet, PDF (4/9 Pages) Infineon Technologies AG – HiRel C-Band GaAs Power-MESFET

Electrical Characteristics (continued)
CLY38
Parameter
Symbol
Values
min. typ. max.
AC Characteristics
Linear power gain ¹⁾
G_lp
V_DS = 9 V, I_D = 1400 mA, f = 2.3 GHz,
P_in = 0 dBm
CLY38-00
10.0 11.0 -
CLY38-05
10.5 11.2 -
CLY38-10
10.5 11.2 -
Output power at 1dB gain compr. ¹⁾
P_1dB
V_DS = 9 V, I_{D(RF off)} = 1400 mA, f = 2.3 GHz
CLY38-00
37.5 37.8 -
CLY38-05
38
38.3 -
CLY38-10
38.5 38.8 -
Output power ¹⁾
V_DS = 9 V, I_{D(RF off)} = 1400 mA,
f = 2.3 GHz, P_in = 28 dBm
CLY38-00
P_out
-
37.8 -
CLY38-05
-
38.3 -
CLY38-10
-
38.8 -
Power added efficiency ^{1), 2)}
PAE
V_DS = 9 V, I_{D(RF off)} = 1400 mA,
f = 2.3 GHz, @ 1dB gain compression
CLY38-00
40
47
-
CLY38-05
45
50
-
CLY38-10
45
53
-
Notes.:
1) RF Power characteristics given for power matching conditions
2) Power added efficiency: PAE = (P_RFout - P_RFin) / P_DC
Unit
dB
dBm
dBm
%
Semiconductor Group
4 of 10
Draft D, September 99