CLX34 Datasheet, PDF (4/9 Pages) Infineon Technologies AG – HiRel X-Band GaAs Power-MESFET

CLX34
Electrical Characteristics (continued)
Parameter
Symbol
Values
min. typ. max.
AC Characteristics
Linear power gain ¹⁾
G_lp
V_DS = 8 V, I_D = 600 mA, f = 2.3 GHz,
P_in = 11 dBm
CLX34-00
13.5 14.5 -
CLX34-05
14.0 15.0 -
CLX34-10
14.0 15.0 -
Power output at 1dB gain compr. ¹⁾
P_1dB
V_DS = 8 V, I_{D(RF off)} = 600 mA, f = 2.3 GHz
CLX34-00
-
33.2 -
CLX34-05
-
34.0 -
CLX34-10
-
34.5 -
Output Power ¹⁾
P_out
V_DS = 8 V, I_{D(RF off)} = 600 mA, f = 2.3 GHz,
P_in = 21.0 dBm
CLX34-00
32.7 33.2 -
CLX34-05
33.7 34.0 -
CLX34-10
34.2 34.5 -
Power added efficiency ^{1), 2)}
PAE
V_DS = 8 V, I_{D(RF off)} = 600 mA, f = 2.3 GHz,
P_in = 21.0 dBm
CLX34-00
42
47
-
CLX34-05
44
51
-
CLX34-10
46
53
-
Notes.:
1) RF Power characteristics given for power matching conditions
2) Power added efficiency: PAE = (P_RFout - P_RFin) / P_DC
Unit
dB
dBm
dBm
%
Semiconductor Group
4 of 10
Draft D, September 99