CLX32 Datasheet, PDF (4/9 Pages) Infineon Technologies AG – HiRel X-Band GaAs Power-MESFET

Electrical Characteristics (continued)
CLX32
Parameter
Symbol
Values
min. typ. max.
AC Characteristics
Linear power gain ¹⁾
G_lp
V_DS = 8 V, I_D = 400 mA, f = 2.3 GHz,
P_in = 8 dBm
CLX32-00
15.0 16.0 -
CLX32-05
15.5 16.5 -
CLX32-10
15.5 16.5 -
Power output at 1dB gain compr. ¹⁾
P_1dB
V_DS = 8 V, I_{D(RF off)} = 400 mA, f = 2.3 GHz
CLX32-00
-
31.5 -
CLX32-05
-
32.3 -
CLX32-10
-
32.8 -
Output Power ¹⁾
P_out
V_DS = 8 V, I_{D(RF off)} = 400 mA, f = 2.3 GHz,
P_in = 18.0 dBm
CLX32-00
31.0 31.5 -
CLX32-05
32.0 32.3 -
CLX32-10
32.5 32.8 -
Power added efficiency ^{1), 2)}
PAE
V_DS = 8 V, I_{D(RF off)} = 400 mA, f = 2.3 GHz,
P_in = 18.0 dBm
CLX32-00
43
48
-
CLX32-05
46
52
-
CLX32-10
48
54
-
Notes.:
1) RF Power characteristics given for power matching conditions
2) Power added efficiency: PAE = (P_RFout - P_RFin) / P_DC
Unit
dB
dBm
dBm
%
Semiconductor Group
4 of 10
Draft D, September 99