CLX30 Datasheet, PDF (4/9 Pages) Infineon Technologies AG – HiRel X-Band GaAs Power-MESFET

Electrical Characteristics (continued)
CLX30
Parameter
Symbol
Values
min. typ. max.
AC Characteristics
Linear power gain ¹⁾
G_lp
V_DS = 8 V, I_D = 240 mA, f = 2.3 GHz,
P_in = 4 dBm
CLX30-00
16.5 17.5 -
CLX30-05
17.0 18.0 -
CLX30-10
17.0 18.0 -
Power output at 1dB gain compr. ¹⁾
P_1dB
V_DS = 8 V, I_{D(RF off)} = 240 mA, f = 2.3 GHz
CLX30-00
-
29.5 -
CLX30-05
-
30.3 -
CLX30-10
-
30.8 -
Output Power ¹⁾
P_out
V_DS = 8 V, I_{D(RF off)} = 240 mA, f = 2.3 GHz,
P_in = 14.5 dBm
CLX30-00
29.0 29.5 -
CLX30-05
30.0 30.3 -
CLX30-10
30.5 30.8 -
Power added efficiency ^{1), 2)}
PAE
V_DS = 8 V, I_{D(RF off)} = 240 mA, f = 2.3 GHz,
P_in = 14.5 dBm
CLX30-00
43
48
-
CLX30-05
46
52
-
CLX30-10
48
54
-
Notes.:
1) RF Power characteristics given for power matching conditions
2) Power added efficiency: PAE = (P_RFout - P_RFin) / P_DC
Unit
dB
dBm
dBm
%
Semiconductor Group
4 of 10
Draft D, September 99