BUZ61 Datasheet, PDF (4/9 Pages) Siemens Semiconductor Group – SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

BUZ 61
Electrical Characteristics, at T_j = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Reverse Diode
Inverse diode continuous forward current
I_S
T_C = 25 °C
-
Inverse diode direct current,pulsed
I_SM
T_C = 25 °C
-
Inverse diode forward voltage
V_SD
V_GS = 0 V, I_F = 25 A
-
Reverse recovery time
t_rr
V_R = 100 V, I_F=l_S, di_F/dt = 100 A/µs
-
Reverse recovery charge
Q_rr
V_R = 100 V, I_F=l_S, di_F/dt = 100 A/µs
-
A
-
12.5
-
50
V
1.1
1.4
ns
280
-
µC
3
-
Semiconductor Group
4
07/96