BTS740S2_07 Datasheet, PDF (4/17 Pages) Infineon Technologies AG – Smart High-Side Power Switch

Smart High-Side Power Switch
BTS740S2
Parameter and Conditions, each of the two channels Symbol
at Tj = -40...+150°C, V_bb = 12 V unless otherwise specified
Load Switching Capabilities and Characteristics
On-state resistance (Vbb to OUT); IL = 5 A
each channel, T_j = 25°C: R_ON
T_j = 150°C:
two parallel channels, T_j = 25°C:
Output voltage drop limitation at small load
currents, see page 14
I_L = 0.5 A
V_ON(NL)
T_j =-40...+150°C:
Nominal load current
one channel active: I_L(NOM)
two parallel channels active:
Device on PCB^6), T_a = 85°C, T_j ≤ 150°C
Output current while GND disconnected or pulled up⁷⁾; I_L(GNDhigh)
Vbb = 30 V, V_IN = 0, see diagram page 10
Turn-on time⁸⁾
IN
to 90% V_OUT: t_on
Turn-off time
IN
to 10% V_OUT: t_off
R_L = 12 Ω
Slew rate on ⁸⁾
10 to 30% V_OUT, R_L = 12 Ω:
dV/dt_on
Slew rate off ⁸⁾
70 to 40% V_OUT, R_L = 12 Ω:
-dV/dt_off
Values
Unit
min typ max
-- 27 30 mΩ
54 60
14 15
-- 50
4.9 5.5
7.8 8.5
-- mV
-- A
--
--
8 mA
25 70 150 µs
25 80 200
0.1
--
1 V/µs
0.1
--
1 V/µs
Operating Parameters
Operating voltage⁹⁾
V_bb(on)
5.0
-- 34 V
Undervoltage shutdown
V_bb(under)
3.2
-- 5.0 V
Undervoltage restart
T_j =-40...+25°C: V_{bb(u rst)}
T_j =+150°C:
-- 4.5 5.5 V
6.0
Undervoltage restart of charge pump
see diagram page 13
T_j =-40...+25°C: V_bb(ucp)
T_j =150°C:
-- 4.7 6.5 V
--
-- 7.0
Undervoltage hysteresis
∆V_bb(under) = V_{bb(u rst)} - V_bb(under)
∆V_bb(under)
-- 0.5
-- V
Overvoltage shutdown
V_bb(over)
34
-- 43 V
Overvoltage restart
V_{bb(o rst)}
33
--
-- V
6) _{Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm}2 _{(one layer, 70µm thick) copper area for Vbb}
connection. PCB is vertical without blown air. See page 15
7) _{not subject to production test, specified by design}
8) _{See timing diagram on page 11.}
9) _{At supply voltage increase up to Vbb= 4.7 V typ without charge pump, VOUT ≈Vbb - 2 V}
Data Sheet
4
V1.0, 2007-05-13