BTS50085-1TMB Datasheet, PDF (4/18 Pages) Infineon Technologies AG – Smart Highside High Current Power Switch

Parameter and Conditions
at Tj = -40 ... +150 °C, V_bb = 24 V unless otherwise specified
Data Sheet BTS50085-1TMB
Symbol
Values
Unit
min typ max
Inverse Load Current Operation
On-state resistance (Pins 1,2,6,7 to pin 4)
V_bIN = 12 V, I_L = - 20 A
T_j = 25 °C:
see diagram on page 10
T_j = 150 °C:
Nominal inverse load current (Pins 1,2,6,7 to Tab)
V_ON = -0.5 V, T_c = 85 °C
Drain-source diode voltage (Vout > Vbb)
I_L = - 20 A, I_IN = 0, Tj = +150°C
R_ON(inv)
I_L(inv)
-V_ON
-- 7.2
14.6
50 60
9 mΩ
17
-- A
-- 0.6 0.7 mV
Operating Parameters
Operating voltage (V_IN = 0) ¹²⁾
Under voltage shutdown ¹³⁾¹⁴⁾
Under voltage start of charge pump
see diagram page 15
Over voltage protection ¹⁵⁾
I_bb = 15 mA
T_j =-40°C:
T_j = 25...+150°C:
Standby current
I_IN = 0, V_bb=35V
T_j =-40...+25°C:
T_j = 150°C:
V_bb(on)
V_bIN(u)
V_bIN(ucp)
V_bIN(Z)
I_bb(off)
5.0
-- 58 V
1.5 3.0 4.5 V
3.0 4.5 6.0 V
68
--
-- V
70 72
--
-- 15 25 µA
-- 25 50
12_{) If the device is turned on before a Vbb-decrease, the operating voltage range is extended down to VbIN(u).}
For the voltage range 0..58 V the device provides embedded protection functions against overtemperature
and short circuit.
13_{) not subject to production test, specified by design}
14_{) VbIN = Vbb - VIN see diagram on page 15. When VbIN increases from less than VbIN(u) up to VbIN(ucp) = 5 V}
(typ.) the charge pump is not active and V_OUT ≈V_bb - 3 V.
15_{) See also VON(CL) in circuit diagram on page 9.}
Infineon Technologies AG
Page 4
2008-Jan-24