BSZ110N08NS5 Datasheet, PDF (4/12 Pages) Infineon Technologies AG – Ideal for high frequency switching and sync. rec

OptiMOS^ª5Power-Transistor,80V
BSZ110N08NS5
2Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current
Pulsed drain current¹⁾
Avalanche energy, single pulse²⁾
Gate source voltage
Power dissipation
Operating and storage temperature
ID
ID,pulse
EAS
VGS
Ptot
Tj,Tstg
Min.
-
-
-
-
-20
-
-55
Values
Typ. Max.
-
40
-
33
-
160
-
40
-
20
-
50
-
150
Unit Note/TestCondition
A
TC=25°C
TC=100°C
A TC=25°C
mJ ID=20A,RGS=25Ω
V-
W TC=25°C
°C
IEC climatic category;
DIN IEC 68-1: 55/150/56
3Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Symbol
Thermal resistance, junction - case
Device on PCB,
6 cm² cooling area³⁾
RthJC
RthJA
Min.
-
Values
Typ. Max.
1.5 2.5
Unit Note/TestCondition
K/W -
-
-
60 K/W -
1) _{See figure 3 for more detailed information}
2) _{See figure 13 for more detailed information}
3) _{Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm}2 _{(one layer, 70 µm thick) copper area for drain connection.}
PCB is vertical in still air.
Final Data Sheet
4
Rev.2.1,2014-05-05