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BSF050N03LQ3G Datasheet, PDF (4/11 Pages) Infineon Technologies AG – OptiMOS3 Power-MOSFET
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1 Power dissipation
P tot=f(T C)
2 Drain current
I D=f(T C); V GS≥10 V
BSF050N03LQ3 G
30
70
60
25
50
20
40
15
30
10
20
5
10
0
0
0
40
80
120
160
0
40
80
120
160
T C [°C]
T C [°C]
3 Safe operating area
I D=f(V DS); T C=25 °C; D =0
parameter: t p
103
limited by on-state
resistance
102
101
DC
100
1 µs
10 µs
100 µs
1 ms
10 ms
4 Max. transient thermal impedance
Z thJC=f(t p)
parameter: D =t p/T
101
0.5
100 0.2
0.1
0.05
10-1 0.02
0.01
single pulse
10-2
10-1
10-1
Rev. 2.0
100
101
V DS [V]
10-3
102
10-6
10-5
10-4
10-3
10-2
10-1
100
t p [s]
page 4
2009-05-11
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