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BSC159N10LSFG Datasheet, PDF (4/10 Pages) Infineon Technologies AG – OptiMOS™2 Power-Transistor
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1 Power dissipation
P tot=f(T C)
2 Drain current
I D=f(T C); V GS≥10 V
BSC159N10LSF G
120
80
100
60
80
60
40
40
20
20
0
0
40
80
120
T C [°C]
3 Safe operating area
I D=f(V DS); T C=25 °C; D =0
parameter: t p
103
1 µs
10 µs
102
100 µs
1 ms
101
10 ms
DC
100
10-1
10-1
Rev. 2.09
100
101
102
V DS [V]
0
160
0
40
80
120
160
T C [°C]
4 Max. transient thermal impedance
Z thJC=f(t p)
parameter: D =t p/T
101
100
0.5
0.2
0.1
10-1
0.05
0.02
0.01
single pulse
10-2
103
10-5
page 4
10-4
10-3
10-2
10-1
t p [s]
2009-11-04
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