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BSC100N03MSG Datasheet, PDF (4/10 Pages) Infineon Technologies AG – OptiMOS™3 M-Series Power-MOSFET
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1 Power dissipation
P tot=f(T C)
35
2 Drain current
I D=f(T C)
parameter: V GS
50
BSC100N03MS G
30
40
25
30
20
4.5 V
10 V
15
20
10
10
5
0
0
0
40
80
120
160
0
40
80
120
160
T C [°C]
T C [°C]
3 Safe operating area
I D=f(V DS); T C=25 °C; D =0
parameter: t p
103
4 Max. transient thermal impedance
Z thJC=f(t p)
parameter: D =t p/T
10
limited by on-state
resistance
102
DC
101
100
1 µs
10 µs
100 µs
1 ms
10 ms
0.5
1 0.2
0.1
0.05
0.02
0.01
0.1
single pulse
10-1
10-1
Rev. 1.16
100
101
V DS [V]
102
0.01 0
10-6
0
10-5
0
10-4
0
10-3
0
10-2
0
10-1
1
100
t p [s]
page 4
2009-11-03
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