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BSC0901NS Datasheet, PDF (4/12 Pages) Infineon Technologies AG – n-Channel Power MOSFET
◁
OptiMOS™ Power-MOSFET
BSC0901NS
Electrical characteristics
4
Electrical characteristics
Electrical characteristics, at Tj=25 °C, unless otherwise specified.
Table 4 Static characteristics
Parameter
Symbol
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
V(BR)DSS
VGS(th)
IDSS
Min.
30
1
-
-
Values
Typ.
Max.
-
-
-
2.2
0.1
1
10
100
Gate-source leakage current
IGSS
-
Drain-source on-state resistance RDS(on) -
-
Gate resistance
Transconductance
RG
-
gfs
70
10
100
1.9
2.4
1.6
1.9
0.8
-
140
-
Unit Note / Test Condition
V
VGS=0 V, ID=1.0 mA
VDS=VGS, ID=250 µA
µA
VDS=30 V, VGS=0 V,
Tj=25 °C
VDS=30 V, VGS=0 V,
Tj=125 °C
nA
VGS=20 V, VDS=0 V
mΩ VGS=4.5 V, ID=30 A,
VGS=10 V, ID=30 A,
Ω
S
|VDS|>2|ID|RDS(on)max,
ID=30 A
Table 5 Dynamic characteristics
Parameter
Symbol
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Min.
-
-
-
-
-
-
-
Values
Typ.
2800
960
140
5.4
6.8
28
4.8
Max.
-
-
-
-
-
-
-
Unit
pF
Note /
Test Condition
VGS=0 V, VDS=15 V,
f=1 MHz
ns
VDD=15 V, VGS=10 V,
ID=30 A, RG= 1.6 Ω
Final Data Sheet
3
2.0, 2011-03-01
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