BSC059N03SG Datasheet, PDF (4/10 Pages) Infineon Technologies AG – OptiMOS™2 Power-Transistor

1 Power dissipation
P _tot=f(T _C)
2 Drain current
I _D=f(T _C); V _GS≥10 V
BSC059N03S G
60
80
50
60
40
30
40
20
20
10
0
0
0
40
80
120
160
0
40
80
120
160
T _C [°C]
T _C [°C]
3 Safe operating area
I _D=f(V _DS); T _C=25 °C; D =0
parameter: t _p
103
1000
limited by on-state
resistance
4 Max. transient thermal impedance
Z _thJC=f(t _p)
parameter: D =t _p/T
101
10
1 µs
102
100
101
10
10^{0 1}
10 µs
100 µs
DC
1 ms
10 ms
0.5
10^{0 1}
0.2
0.1
0.05
10-1
0.1
0.02
0.01
single pulse
10-1 0.1
0.1
10^-1
Rev. 1.56
1
10
10⁰
10¹
V _DS [V]
100
10²
10-2 0.01
0
10^-6
page 4
0
10^-5
0
0
10^-4
10^-3
t _p [s]
0
10^-2
0
10^-1
2009-10-22