BSC0503NSI_15 Datasheet, PDF (4/13 Pages) Infineon Technologies AG – Metal Oxide Semiconductor Field Effect Transistor

OptiMOS^TM5Power-MOSFET,30V
BSC0503NSI
2Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current
ID
Pulsed drain current²⁾
Avalanche current, single pulse³⁾
Avalanche energy, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
ID,pulse
IAS
EAS
VGS
Ptot
Tj,Tstg
Min.
-
-
-
-
-
-
-
-
-20
-
-
-55
Values
Typ. Max.
-
88
-
55
-
79
-
50
-
22
-
352
-
40
-
10
-
20
-
36
-
2.5
-
150
Unit Note/TestCondition
VGS=10V,TC=25°C
VGS=10V,TC=100°C
A VGS=4.5V,TC=25°C
VGS=4.5V,TC=100°C
VGS=10V,TA=25°C,RthJA=50K/W¹⁾
A TC=25°C
A TC=25°C
mJ ID=40A,RGS=25Ω
V-
W
TC=25°C
TA=25°C,RthJA=50K/W¹⁾
°C
IEC climatic category;
DIN IEC 68-1: 55/150/56
3Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Symbol
Thermal resistance, junction - case,
bottom
Thermal resistance, junction - case,
top
Device on PCB,
6 cm² cooling area¹⁾
RthJC
RthJC
RthJA
Values
Unit Note/TestCondition
Min. Typ. Max.
-
-
3.5 K/W -
-
-
20 K/W -
-
-
50 K/W -
1) _{Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm}2 _{(one layer, 70 µm thick) copper area for drain}
connection. PCB is vertical in still air.
2) _{See Diagram 3 for more detailed information}
3) _{See Diagram 13 for more detailed information}
Final Data Sheet
4
Rev.2.0,2015-07-13