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| BSC014N03LSG Datasheet, PDF (4/10 Pages) Infineon Technologies AG – OptiMOS™3 Power-MOSFET | |||
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1 Power dissipation
P tot=f(T C)
2 Drain current
I D=f(T C); V GSâ¥10 V
BSC014N03LS G
160
120
140
100
120
80
100
80
60
60
40
40
20
20
0
0
0
40
80
120
160
0
40
80
120
160
T C [°C]
T C [°C]
3 Safe operating area
I D=f(V DS); T C=25 °C; D =0
parameter: t p
103
limited by on-state
resistance
1 µs
10 µs
4 Max. transient thermal impedance
Z thJC=f(t p)
parameter: D =t p/T
100
0.5
102
100 µs
DC
1 ms
101
10 ms
100
0.2
10-1 0.1
0.05
0.02
0.01
10-2
single pulse
10-1
10-1
Rev. 1.3
100
101
V DS [V]
10-3
102
10-6
10-5
10-4
10-3
10-2
10-1
100
t p [s]
page 4
2009-10-22
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