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BSB015N04NX3G_11 Datasheet, PDF (4/13 Pages) Infineon Technologies AG – n-Channel Power MOSFET
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OptiMOS™ Power-MOSFET
BSB015N04NX3 G
Electrical characteristics
4
Electrical characteristics
Electrical characteristics, at Tj=25 °C, unless otherwise specified.
Table 4 Static characteristics
Parameter
Symbol
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
V(BR)DSS
VGS(th)
IDSS
Min.
40
2
-
-
Values
Typ.
Max.
-
-
-
4
0.1
10
10
100
Gate-source leakage current
IGSS
-
10
100
Drain-source on-state resistance RDS(on) -
1.3
1.5
Gate resistance
RG
0.2
0.5
1.0
Transconductance
gfs
55
110
Unit Note / Test Condition
V
VGS=0 V, ID=1mA
VDS=VGS, ID=250 µA
µA
VDS=40 V, VGS=0 V,
Tj=25 °C
VDS=40 V, VGS=0 V,
Tj=125 °C
nA
VGS=20 V, VDS=0 V
mΩ VGS=10V, ID=30A
Ω
S
|VDS|>2|ID|RDS(on)max,
ID=30 A
Table 5 Dynamic characteristics
Parameter
Symbol
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Min.
-
-
-
-
-
-
-
Values
Typ.
9000
2300
91
23
6.4
36
7.6
Max.
12000
3100
-
-
-
-
-
Unit
pF
Note /
Test Condition
VGS=0 V, VDS=20 V,
f=1 MHz
ns
VDD=20V, VGS=10 V,
ID=30 A, RG= 1.6 Ω
Final Data Sheet
3
2.4, 2011-05-24
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