BGA622 Datasheet, PDF (4/9 Pages) Infineon Technologies AG – Silicon Germanium Wide Band Low Noise Amplifier

Silicon Germanium
Wide Band Low Noise Amplifier
BGA622
Features
• High gain, |S₂₁|²=14.8 dB at 1.575 GHz
|S₂₁|²=13.9 dB at 1.9 GHz
|S₂₁|²=13.3 dB at 2.14 GHz
|S₂₁|²=12.7 dB at 2.4 GHz
• Low noise figure, NF=1.1 dB at 2.14 GHz
• Operating frequency range 0.5 - 6 GHz
• Typical supply voltage: 2.75 V
• On/Off - Switch
• Output-match on chip, input pre-matched
• Low part count
• 70 GHz f_T - Silicon Germanium technology
3
4
2
1
VPS05605
Applications
• LNA for GSM, GPS, DCS, PCS, UMTS, Bluetooth, ISM and WLAN
Vcc,4
In,1
On/Off
20 kOhm
GND,2
Out,3
Description
The BGA622 is a wide band low noise
amplifier, based on Infineon Technologies’
Silicon Germanium Technology B7HF. In
order to provide the LNA in a small package
the out-pin is simultaneously used for RF out
and On/Off switch. This functionality can be
accessed using a RF-Choke at the Out pin,
where a DC level of 0 V or an open switches
the device on and a DC level of Vcc
switches the device off. While the device is
switched off, it provides an insertion loss of
20 dB together with a high IIP3 up to
18 dBm.
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
BGA622
Package
SOT343
Marking
BRs
Chip
T0535
Data Sheet
4
2002-09-13