BGA427H6327XTSA1 Datasheet, PDF (4/7 Pages) Infineon Technologies AG – Si-MMIC-Amplifier in SIEGET 25-Technologie

BGA427
Transistor Chip Data T1 (Berkley-SPICE 2G.6 Syntax) :
IS =
0.21024 fA
VAF = ^{39.251 V}
NE = ^1.7763 -
VAR = ^{34.368 V}
NC = ^1.3152 -
RBM = ^1.3491 Ω
CJE = ^{3.7265 fF}
TF =
4.5899
ps
ITF = 1.3364 mA
VJC = ^{0.99532 V}
TR = ^{1.4935 ns}
MJS = ⁰
-
XTI = ³
-
BF =
83.23
-
IKF = ^{0.16493 A}
BR = ^10.526 -
IKR = ^{0.25052 A}
RB = ¹⁵
Ω
RE = ^1.9289
VJE = ^{0.70367 V}
XTF = ^0.3641 -
PTF = 0
deg
MJC = ^0.48652 -
CJS = ⁰
fF
XTB = ⁰
-
FC = ^0.99469 -
NF = ^1.0405 -
ISE = ^{15.761 fA}
NR = ^0.96647 -
ISC = ^{0.037223 fA}
IRB = ^{0.21215 A}
RC = ^0.12691 Ω
MJE = ^0.37747 -
VTF = ^{0.19762 V}
CJC = 96.941 fF
XCJC = ^0.08161 -
VJS = ^0.75
V
EG = ^1.11
eV
TNOM ³⁰⁰
K
C'-E'-Diode Data (Berkley-SPICE 2G.6 Syntax) :
IS =
2
fA _{N =}
1.02
-
RS = 20
Ω
All parameters are ready to use, no scaling is necessary
Package Equivalent Circuit:
C₁
C _CB
L₁
C₂
14
L₂
L_BI =
OUT _{LBO =}
0.36
0.4
nH
nH
C₃
L_EI =
0.3
nH
L_EO = ^0.15
nH
L_CI =
0.36
nH
L _BO
IN
L _BI
11 BGA 427 13 ^{L CI}
Chip
L _CO
L_CO =
+V _{CBE =}
0.4
95
nH
fF
C_CB = 6
fF
12
C’-E’-
Diode
C_CE = 132
fF
C _BE
C _CE
C₁ =
28
fF
L _EI
C₂ =
88
fF
C₃ =
8
fF
L₁ =
0.6
nH
L _EO
L₂ =
0.4
nH
GND
EHA07382 _{Valid up to 3GHz}
Extracted on behalf of Infineon Technologies AG by:
Institut für Mobil-und Satellitentechnik (IMST)
For examples and ready to use parameters please contact your local Infineon Technologies distributor
or sales office to obtain a Infineon Technologies CD-ROM or see Internet:
http://www.infineon.com/silicondiscretes
4
2011-09-15