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BFR360F_10 Datasheet, PDF (4/11 Pages) Infineon Technologies AG – NPN Silicon RF Transistor | |||
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Total power dissipation Ptot = Æ(TS)
BFR360F
Collector-base capacitance Ccb= Æ(VCB)
f = 1MHz
240
0.8
mW
pF
180
150
120
90
60
30
0
0 15 30 45 60 75 90 105 120 °C 150
TS
Third order Intercept Point IP3=Æ(IC)
(Output, ZS=ZL=50â¦)
VCE = parameter, f = 1.8GHz
30
dBm
20
15
10
6V
4V
3V
5
2V
1V
0
-5
0 5 10 15 20 25 30 mA 40
IC
0.6
0.5
0.4
0.3
0.2
0.1
0
0 2 4 6 8 10 12 V 16
VCB
Transition frequency fT= Æ(IC)
f = 1GHz
VCE = parameter
17
GHz
14
5V
12
3V
10
2V
8
1V
6
0.7V
4
2
0
0 5 10 15 20 25 30 mA 40
IC
4
2010-05-20
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