BFP420 Datasheet, PDF (4/10 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For high gain low noise amplifiers For oscillators up to 10 GHz)

BFP420
SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax):
Transistor Chip Data:
IS =
0.20045 fA
VAF = ^{28.383 V}
NE = ^{2.0518 -}
VAR = ^{19.705 V}
NC = ^{1.1724 -}
RBM = ^3.4849 Ω
CJE = ^{1.8063 fF}
TF =
6.7661
ps
ITF = ¹
mA
VJC = ^{0.81696 V}
TR = ^{2.3249 ns}
MJS = ⁰
-
XTI = ³
-
BF =
72.534
-
NF = ^{1.2432 -}
IKF = 0.48731 ^A
ISE = ^{19.049 fA}
BR = 7.8287 ^-
NR = ^{1.3325 -}
IKR = 0.69141 ^mA ISC = ^{0.019237 fA}
RB = 8.5757 Ω
IRB = ^{0.72983 mA}
RE = 0.31111 ^-
RC = ^0.10105 Ω
VJE = 0.8051 ^V
MJE = ^{0.46576 -}
XTF = 0.42199 ^-
VTF = ^{0.23794 V}
PTF = 0
deg _{CJC =} 234.53 fF
MJC = 0.30232 ^-
XCJC = ^0.3
-
CJS = 0
fF
VJS = ^0.75
V
XTB = 0
-
EG = ^1.11
eV
FC = 0.73234
TNOM ³⁰⁰
K
C`-E`-dioden Data (Berkley-Spice 1G.6 Syntax): IS = 3.5 fA; N = 1.02 -, RS = 10 Ω
All parameters are ready to use, no scalling is necessary.
Package Equivalent Circuit:
C _CB
L_BI =
0.47
nH
L_BO = ^0.53
nH
L_EI=
0.23
nH
L _BO
B
L _BI
B’ Transistor C’ ^{L CI}
Chip
L _CO
C
L_EO =
0.05
nH
L_CI =
0.56
nH
C’-E’-
E’
Diode
L_CO = 0.58
nH
C _BE
C _CE
C_BE = ¹³⁶
fF
L _EI
C_CB = ^6.9
fF
C_CE = ¹³⁴
fF
Valid up to 6GHz
L _EO
E
EHA07389
The SOT343 package has two emitter leads. To avoid high complexity to the package equivalent
circuit both leads are combined in one electrical connection
Extracted on behalf of Infineon Technologies AG by: Institut für Mobil- und Satellitentechnik (IMST)
For examples and ready to use parameters please contact your local Infineon Technologies distributor
or sales office to obtain a InfineonTechnologies CD-ROM or see Internet: http//www.infineon.com/silicondiscretes
2007-04-20
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