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| BCR108_07 Datasheet, PDF (4/12 Pages) Infineon Technologies AG – NPN Silicon Digital Transistor | |||
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BCR108...
DC current gain hFE = Æ(IC)
VCE = 5V (common emitter configuration)
TA = Parameter
10 3
Collector-emitter saturation voltage
VCEsat = Æ(IC), IC/IB = 20
TA = Parameter
0.5
V
10 2
-40 °C
-25 °C
10 1
25 °C
85 °C
125 °C
10
0
10
-4
10 -3
10 -2
A
10 -1
IC
Input on Voltage Vi(on) = Æ(IC)
VCE = 0.3V (common emitter configuration)
TA = Parameter
10 1
0.4
0.35
0.3
-40 °C
0.25
-25 °C
25 °C
0.2
85 °C
125 °C
0.15
0.1
0.05
0
10
-3
10 -2
A
10 -1
IC
Input off voltage Vi(off) = Æ(IC)
VCE = 5V (common emitter configuration)
TA = Parameter
10 1
V
-40 °C
-25 °C
25 °C
85 °C
125 °C
10 0
V
-40 °C
-25 °C
25 °C
85 °C
125 °C
10 0
10
-1
10
-5
10 -4
10 -3
10 -2 A
IC
10 -1
10
-1
10
-5
10 -4
10 -3
10 -2 A
IC
10 -1
4
2007-07-24
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