BCP68 Datasheet, PDF (4/4 Pages) NXP Semiconductors – NPN medium power transistor

BCP68
Collector-emitter saturation voltage
I_C = f (V_CEsat), h_FE = 10
Base-emitter saturation voltage
I_C = f (V_BEsat), h_FE = 10
10 ^{4 BCP 68}
mA
Ι_C
10 ³
5
10 ²
5
100 ˚C
25 ˚C
-50 ˚C
EHP00278
10 ^{4 BCP 68}
mA
Ι_C
10 ³
5
10 ²
5
100 ˚C
25 ˚C
-50 ˚C
EHP00279
10 ¹
10 ¹
5
5
10 ⁰
0
0.2
0.4
Permissible pulse load
P_totmax / P_totDC = f (t_p)
0.6 V 0.8
V _CEsat
10 ⁰
0
0.2 0.4 0.6 0.8
V 1.2
V_{BE sat}
10 ^{3 BCP 68}
P_{tot max}
P_{tot DC}
10 ²
5
10 ¹
5
EHP00280
D = ^tp
T
t_p
T
D = 0.0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 ^-1
10 ^-6 10 ^-5 10 ^-4 10 ^-3 10 ^-2
s 10¹
t_p
4
Nov-29-2001