AUIRFS4115-7P Datasheet, PDF (4/10 Pages) Infineon Technologies AG – HEXFET Power MOSFET

1000
100
TJ = 175°C
10
TJ = 25°C
1
0.1
0.0
VGS = 0V
0.5
1.0
1.5
2.0
VSD, Source-to-Drain Voltage (V)
Fig. 7 Typical Source-to-Drain Diode
120
100
80
60
40
20
0
25
50
75
100 125 150 175
TC , CaseTemperature (°C)
Fig 9. Maximum Drain Current vs. Case Temperature
4
3
2
1
0
0
20 40 60 80 100 120 140
VDS, Drain-to-Source Voltage (V)
Fig 11. Typical COSS Stored Energy
4
AUIRFS4115-7P
10000
1000
OPERATION IN THIS AREA
LIMITED BY R _DS(on)
100µsec
100
1msec
10
10msec
1 _{Tc = 25°C}
Tj = 175°C
Single Pulse
0.1
0.1
1
DC
10
100
VDS, Drain-toSource Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
190
Id = 3.5mA
180
170
160
150
140
-60 -40 -20 0 20 40 60 80 100 120 140160 180
TJ , Temperature ( °C )
Fig 10. Drain-to-Source Breakdown Voltage
1000
800
ID
TOP
14A
24A
BOTTOM 63A
600
400
200
0
25
50
75
100 125 150 175
Starting TJ, Junction Temperature (°C)
Fig 12. Maximum Avalanche Energy vs. Drain Current
2015-12-4