AUIRF1404 Datasheet, PDF (4/10 Pages) International Rectifier – HEXFET® Power MOSFET

10000
8000
6000
VGS = 0V, f = 1 MHZ
Ciss = Cgs+ Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds+ Cgd
Ciss
4000
Coss
2000
Crss
0
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
AUIRF1404
20 _{ID = 121A}
16
V
V
DDSS⁼⁼
32V
20V
12
8
4
FOR TEST CIRCUIT
0
SEE FIGURE 13
0
50
100
150
200
Q_G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
1000
T_J= 175° C
100
10
T_J= 25° C
1
0.1
0.0
V _GS = 0 V
0.5 1.0 1.5 2.0 2.5 3.0 3.5
V_SD,Source-to-Drain Voltage (V)
Fig. 7 Typical Source-to-Drain Diode
Forward Voltage
4
10000
1000
OPERATIONBINYTRH_DIS_S(oA_nR₎ EA LIMITED
10us
100
100us
1ms
10
10ms
TT_JC
=
=
25 °C
175 °C
1 ^{Single Pulse}
1
10
100
V_DS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
2015-9-30