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2N7002DWH6327 Datasheet, PDF (4/9 Pages) Infineon Technologies AG – OptiMOS™ Small-Signal-Transistor
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1 Power dissipation
P tot=f(T A)
2 Drain current
I D=f(T A); V GS≥10 V
2N7002DW
0.35
0.5
0.3
0.4
0.25
0.2
0.3
0.15
0.2
0.1
0.1
0.05
0
0
0
40
80
120
160
0
40
80
120
160
T A [°C]
T A [°C]
3 Safe operating area
I D=f(V DS); T A=25 °C; D =0
parameter: t p
101
4 Max. transient thermal impedance
Z thJA=f(t p)
parameter: D =t p/T
103
limited by on-state
resistance
100
10-1
10-2
1 µs
10 µs
100 µs
1 ms
10 ms
DC
0.5
102
0.2
0.1 0.05
0.02
0.01
101
single pulse
10-3
1
Rev.2.2
10
V DS [V]
100
100
10-5 10-4 10-3 10-2 10-1 100 101 102 103
t p [s]
page 4
2011-06-16
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